N-Channel Power MOSFET featuring 60V drain-source voltage and 12A continuous drain current. Offers low on-state resistance of 7.8mΩ (typ.) and 10mΩ (max.). Designed for surface mount applications with a TDSON-8 plastic package, operating from -55°C to 150°C. Includes 8ns turn-on and 19ns turn-off delay times, with 3.5nF input capacitance. This RoHS compliant component supports 2.5W power dissipation.
MountingSurface Mount
Power2.5W
Quick Jump:
Technical Specifications
Infineon BSC100N06LS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 7.8mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.5nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 60V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 10mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC100N06LS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC100N06LS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
