Infineon
BSC109N10NS3GXT
Power Field-Effect Transistor, 63A I(D), 100V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Technical Specifications
Infineon BSC109N10NS3GXT technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 5 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon BSC109N10NS3GXT Datasheet
Download the complete datasheet for Infineon BSC109N10NS3GXT to view detailed technical specifications.
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