N-Channel Power MOSFET featuring 30V drain-source voltage and 12mΩ Rds(on) for efficient power switching. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 39A and a maximum power dissipation of 28W. Designed for surface mounting, it operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a fall time of 2.2ns and turn-on delay time of 2.7ns. This component is RoHS compliant and packaged in TDSON-8.
MountingSurface Mount
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Technical Specifications
Infineon BSC120N03LSGATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 39A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.2nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 2.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC120N03LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC120N03LSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.