Infineon
BSC123N08NS3G
Power Field-Effect Transistor, 11A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Technical Specifications
Infineon BSC123N08NS3G technical specifications.
General
| Continuous Drain Current (ID) | 55A |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 1.87nF |
| Lead Free | Lead Free |
| Length | 5.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Rds On Max | 12.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 12ns |
| Width | 6.1mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC123N08NS3G Datasheet
Download the complete datasheet for Infineon BSC123N08NS3G to view detailed technical specifications.
No datasheet is available for this part.