N-Channel Power MOSFET featuring 300V drain-source voltage and 16A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.13 ohms. Designed with a single element and SUPERSO8 packaging, it provides 5 terminals for versatile integration. Operating across a wide temperature range from -55°C to 150°C.
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Technical Specifications
Infineon BSC13DN30NSFDATMA1 technical specifications.
General
| Number of Terminals | 5 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSC13DN30NSFDATMA1 Datasheet
Download the complete datasheet for Infineon BSC13DN30NSFDATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.