Infineon
BSC150N03LDG
Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Technical Specifications
Infineon BSC150N03LDG technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 1.1nF |
| Length | 5.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 26W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 2.7ns |
| Width | 5.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC150N03LDG Datasheet
Download the complete datasheet for Infineon BSC150N03LDG to view detailed technical specifications.
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