N-Channel Power MOSFET, 30V Vdss, 8A continuous drain current, and 15mΩ maximum Rds(on). This silicon Metal-oxide Semiconductor FET features a 2-element design with a maximum power dissipation of 26W and an operating temperature range of -55°C to 150°C. Surface mountable in a TDSON-8 plastic package with tin contact plating, it offers 1.1nF input capacitance and is RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSC150N03LDGATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Resistance | 12.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 26W |
| Mount | Surface Mount |
| On-State Resistance | 15mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC150N03LDGATMA1 Datasheet
Download the complete datasheet for Infineon BSC150N03LDGATMA1 to view detailed technical specifications.
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