N-channel MOSFET with 100V drain-source breakdown voltage and 63A continuous drain current. Features low 15.2mΩ drain-source on-resistance and 114W power dissipation. Operates across a -55°C to 150°C temperature range. Includes fast switching characteristics with 6ns fall time, 14ns turn-on delay, and 22ns turn-off delay. Packaged in TDSON-8, supplied on tape and reel. RoHS compliant and halogen-free.
PolarityN-CHANNEL
Power114W
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Technical Specifications
Infineon BSC152N10NSFG technical specifications.
General
| Continuous Drain Current (ID) | 63A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 15.2mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.9nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Nominal Vgs | 3V |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 114W |
| Radiation Hardening | No |
| Rds On Max | 15.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC152N10NSFG Datasheet
Download the complete datasheet for Infineon BSC152N10NSFG to view detailed technical specifications.
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