N-Channel Power MOSFET featuring 150V drain-source breakdown voltage and 50A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 19mΩ on-state resistance and 125W maximum power dissipation. Designed for surface mounting in a TDSON-8 plastic package, it operates from -55°C to 150°C with fast switching characteristics including a 6ns fall time. The component is RoHS compliant and halogen-free.
MountingSurface Mount
Power125W
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Technical Specifications
Infineon BSC190N15NS3GATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.1mm |
| Input Capacitance | 2.42nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 150V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 19mR |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Power Dissipation | 125W |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC190N15NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC190N15NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.