Infineon
BSC205N10LSGATMA1
Power Field-Effect Transistor, 7.4A I(D), 100V, 0.0205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
MountingSurface Mount
Power76W
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Technical Specifications
Infineon BSC205N10LSGATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 7.4A |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 76W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon BSC205N10LSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC205N10LSGATMA1 to view detailed technical specifications.
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