N-Channel Power MOSFET, 100V Drain-Source Voltage, 40A Continuous Drain Current, and 26.5mΩ On-State Resistance. Features include a 1.85V Threshold Voltage, 1.6nF Input Capacitance, and a maximum power dissipation of 78W. This surface-mount device operates from -55°C to 150°C and is packaged in TDSON-8 with tin-matte contact plating. It is RoHS compliant.
MountingSurface Mount
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Technical Specifications
Infineon BSC265N10LSFGATMA1 technical specifications.
General
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.6nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 78W |
| Mount | Surface Mount |
| On-State Resistance | 26.5mR |
| Package Quantity | 5000 |
| Packaging | Cut Tape |
| Rds On Max | 26.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.85V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC265N10LSFGATMA1 Datasheet
Download the complete datasheet for Infineon BSC265N10LSFGATMA1 to view detailed technical specifications.
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