N-channel MOSFET, 250V Vdss, 25A continuous drain current, and 0.06 ohm Rds(on). This silicon power field-effect transistor features a single element, surface mount design with tin contact plating. It operates within a temperature range of -55°C to 150°C and offers 125W power dissipation. The component is RoHS compliant, Halogen Free, and REACH SVHC compliant.
MountingSurface Mount
Power125W
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Technical Specifications
Infineon BSC600N25NS3GATMA1 technical specifications.
General
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Voltage (Vdss) | 250V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 250V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 125W |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSC600N25NS3GATMA1 Datasheet
Download the complete datasheet for Infineon BSC600N25NS3GATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.