N-channel enhancement mode power MOSFET featuring OptiMOS process technology. This single-element transistor offers a maximum drain-source voltage of 30V and a continuous drain current of 22A. It is housed in an 8-pin TDSON EP surface-mount package with a 1.27mm pin pitch and a low seated plane height of 1mm. Key electrical characteristics include a maximum drain-source on-resistance of 2.6 mOhm at 10V gate-source voltage.
PackageTDSON EP
MountingSurface Mount
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Technical Specifications
Infineon BSC882N03MS G technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | TDSON EP |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5.15 |
| Package Width (mm) | 5.9 |
| Package Height (mm) | 1 |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 22A |
| Maximum Drain Source Resistance | 2.6@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|55@10VnC |
| Typical Gate Charge @ 10V | 55nC |
| Typical Input Capacitance @ Vds | 4300@15VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BSC882N03MS G Datasheet
Download the complete datasheet for Infineon BSC882N03MS G to view detailed technical specifications.
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