The BSC882N03MSGATMA1 is a surface mount N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 69W and a maximum drain to source voltage of 34V. The device has a continuous drain current of 22A and a maximum Rds on resistance of 2.6mΩ. It is packaged in a small outline R-PDSO-F5 package and is available on tape and reel.
MountingSurface Mount
Power2.5W
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Technical Specifications
Infineon BSC882N03MSGATMA1 technical specifications.
General
| Continuous Drain Current (ID) | 22A |
| Drain to Source Voltage (Vdss) | 34V |
| Fall Time | 9.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 2.6mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon BSC882N03MSGATMA1 Datasheet
Download the complete datasheet for Infineon BSC882N03MSGATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.