N-channel enhancement mode MOSFET, 20V drain-source voltage, 1.5A continuous drain current. Features OptiMOS process technology, 120mOhm maximum drain-source resistance at 4.5V gate-source voltage. Housed in a 6-pin SOT-363 surface-mount plastic package with gull-wing leads, measuring 2mm x 1.25mm x 0.9mm. Operating temperature range from -55°C to 150°C.
PackageSOT-363
MountingSurface Mount
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Technical Specifications
Infineon BSD214SN L6327 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-363
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
6
PCB
6
Package Length (mm)
2
Package Width (mm)
1.25
Package Height (mm)
0.9(Max)
Seated Plane Height (mm)
0.9
Pin Pitch (mm)
0.65
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
OptiMOS
Maximum Drain Source Voltage
20V
Maximum Gate Source Voltage
±12V
Maximum Continuous Drain Current
1.5A
Maximum Gate Threshold Voltage
1.2V
Maximum Drain Source Resistance
Typical Gate Charge @ Vgs
0.8@5VnC
Typical Input Capacitance @ Vds
107@10VpF
Maximum Power Dissipation
500mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541210095
Schedule B
8541210080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Infineon BSD214SN L6327 Datasheet
Download the complete datasheet for Infineon BSD214SN L6327 to view detailed technical specifications.
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