N-channel enhancement mode MOSFET, 20V drain-source voltage, 1.5A continuous drain current. Features OptiMOS process technology, 120mOhm maximum drain-source resistance at 4.5V gate-source voltage. Housed in a 6-pin SOT-363 surface-mount plastic package with gull-wing leads, measuring 2mm x 1.25mm x 0.9mm. Operating temperature range from -55°C to 150°C.
PackageSOT-363
MountingSurface Mount
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Technical Specifications
Infineon BSD214SN L6327 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-363 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 2 |
| Package Width (mm) | 1.25 |
| Package Height (mm) | 0.9(Max) |
| Seated Plane Height (mm) | 0.9 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±12V |
| Maximum Continuous Drain Current | 1.5A |
| Maximum Gate Threshold Voltage | 1.2V |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 0.8@5VnC |
| Typical Input Capacitance @ Vds | 107@10VpF |
| Maximum Power Dissipation | 500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541210095 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BSD214SN L6327 Datasheet
Download the complete datasheet for Infineon BSD214SN L6327 to view detailed technical specifications.
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