N-channel Power MOSFET featuring OptiMOS process technology. 30V drain-source voltage and 15A continuous drain current capability. Designed for surface mounting in a 6-pin WDSON package with a 2.4mOhm maximum drain-source resistance at 10V. Single Quad Drain Dual Source configuration with a typical gate charge of 53nC at 10V. Operates across a temperature range of -40°C to 150°C.
PackageWDSON
MountingSurface Mount
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Technical Specifications
Infineon BSF024N03LT3 G technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SON
Package/Case
WDSON
Lead Shape
No Lead
Pin Count
6
PCB
6
Package Length (mm)
4
Package Width (mm)
3.83
Package Height (mm)
0.52
Seated Plane Height (mm)
0.65
Package Material
Copper
Mounting
Surface Mount
Configuration
Single Quad Drain Dual Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
OptiMOS
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
15A
Maximum Gate Threshold Voltage
2.2V
Maximum Drain Source Resistance
2.4@10VmOhm
Typical Gate Charge @ Vgs
53@10V|[email protected]nC
Typical Gate Charge @ 10V
53nC
Typical Input Capacitance @ Vds
4100@15VpF
Maximum Power Dissipation
2200mW
Min Operating Temperature
-40°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BSF024N03LT3 G Datasheet
Download the complete datasheet for Infineon BSF024N03LT3 G to view detailed technical specifications.
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