N-channel enhancement mode power MOSFET featuring OptiMOS process technology. 30V drain-source voltage and 18A continuous drain current capability. Surface mountable in a 6-pin WDSON package (4mm x 3.83mm x 0.52mm) with copper lead-frame. Offers 4.5 mOhm drain-source resistance at 10V Vgs. Suitable for automotive applications with an operating temperature range of -40°C to 150°C.
PackageWDSON
MountingSurface Mount
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Technical Specifications
Infineon BSF045N03MQ3 G technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SON
Package/Case
WDSON
Lead Shape
No Lead
Pin Count
6
PCB
6
Package Length (mm)
4
Package Width (mm)
3.83
Package Height (mm)
0.52
Seated Plane Height (mm)
0.65
Package Material
Copper
Mounting
Surface Mount
Configuration
Single Quad Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
OptiMOS
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
18A
Maximum Drain Source Resistance
4.5@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
2600@15VpF
Maximum Power Dissipation
2200mW
Min Operating Temperature
-40°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
Infineon BSF045N03MQ3 G Datasheet
Download the complete datasheet for Infineon BSF045N03MQ3 G to view detailed technical specifications.
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