N-channel enhancement mode power MOSFET featuring OptiMOS process technology. 30V drain-source voltage and 18A continuous drain current capability. Surface mountable in a 6-pin WDSON package (4mm x 3.83mm x 0.52mm) with copper lead-frame. Offers 4.5 mOhm drain-source resistance at 10V Vgs. Suitable for automotive applications with an operating temperature range of -40°C to 150°C.
PackageWDSON
MountingSurface Mount
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Technical Specifications
Infineon BSF045N03MQ3 G technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | WDSON |
| Lead Shape | No Lead |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 4 |
| Package Width (mm) | 3.83 |
| Package Height (mm) | 0.52 |
| Seated Plane Height (mm) | 0.65 |
| Package Material | Copper |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 18A |
| Maximum Drain Source Resistance | 4.5@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 2600@15VpF |
| Maximum Power Dissipation | 2200mW |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BSF045N03MQ3 G Datasheet
Download the complete datasheet for Infineon BSF045N03MQ3 G to view detailed technical specifications.
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