Automotive N-channel Power MOSFET featuring OptiMOS process technology. This single-element transistor operates in enhancement mode with a maximum drain-source voltage of 30V and a continuous drain current of 15A. It offers a low drain-source on-resistance of 5mOhm at 10V. The component is housed in a 6-pin WDSON surface-mount package with a lead-frame SMT basic package type, measuring 4mm x 3.83mm x 0.52mm. Operating temperature range is -40°C to 150°C.
PackageWDSON
MountingSurface Mount
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Technical Specifications
Infineon BSF050N03LQ3 G technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SON |
| Package/Case | WDSON |
| Lead Shape | No Lead |
| Pin Count | 6 |
| PCB | 6 |
| Package Length (mm) | 4 |
| Package Width (mm) | 3.83 |
| Package Height (mm) | 0.52 |
| Seated Plane Height (mm) | 0.65 |
| Package Material | Copper |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | 20V |
| Maximum Continuous Drain Current | 15A |
| Maximum Drain Source Resistance | 5@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|25@10VnC |
| Typical Gate Charge @ 10V | 25nC |
| Typical Input Capacitance @ Vds | 2250@15VpF |
| Maximum Power Dissipation | 2200mW |
| Min Operating Temperature | -40°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon BSF050N03LQ3 G Datasheet
Download the complete datasheet for Infineon BSF050N03LQ3 G to view detailed technical specifications.
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