Infineon
BSG0811ND
Power Field-Effect Transistor, 19A I(D), 25V, 0.004ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TISON8-4, 8 PIN
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Technical Specifications
Infineon BSG0811ND technical specifications.
General
| Number of Terminals | 7 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon BSG0811ND Datasheet
Download the complete datasheet for Infineon BSG0811ND to view detailed technical specifications.
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