
P-channel MOSFET transistor in TSOP package for surface mounting. Features a continuous drain current of 6A and a drain-to-source breakdown voltage of -20V. Offers a low on-resistance of 41mR at a nominal gate-source voltage of -900mV. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Includes fast switching characteristics with turn-on delay of 9ns and fall time of 53ns. RoHS compliant.
Infineon BSL207SPL6327 technical specifications.
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 41mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 53ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 1.007nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | -900mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 41mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -900mV |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSL207SPL6327 to view detailed technical specifications.
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