N-Channel Silicon Metal-oxide Semiconductor FET, a 2-element, 2-channel device in a TSOP package. Features 20V Drain to Source Breakdown Voltage (Vdss), 1.5A Continuous Drain Current (ID), and 140mR Drain to Source Resistance (Rds On Max). Operates with a Gate to Source Voltage (Vgs) of 12V and a nominal Threshold Voltage of 950mV. Offers fast switching with a 4.1ns Turn-On Delay Time and 6.8ns Turn-Off Delay Time. Maximum power dissipation is 500mW, with operating temperatures from -55°C to 150°C. Surface mountable and RoHS compliant.
PackageTSOP
MountingSurface Mount
PolarityN-CHANNEL
Power500mW
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Technical Specifications
Infineon BSL214NL6327 technical specifications.
General
Package/Case
TSOP
Continuous Drain Current (ID)
1.5A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
140mR
Drain to Source Voltage (Vdss)
20V
Fall Time
7.6ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.1mm
Input Capacitance
143pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Nominal Vgs
950mV
Number of Channels
2
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
500mW
Radiation Hardening
No
Rds On Max
140mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
950mV
Turn-Off Delay Time
6.8ns
Turn-On Delay Time
4.1ns
Compliance
RoHS
Compliant
Datasheet
Infineon BSL214NL6327 Datasheet
Download the complete datasheet for Infineon BSL214NL6327 to view detailed technical specifications.
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