Surface mount N-channel and P-channel junction field-effect transistor (JFET) in a TSOP package. Features a continuous drain current of 1.5A and a drain-to-source breakdown voltage of 20V. Offers a low drain-to-source on-resistance of 140mR at a nominal gate-to-source voltage of 950mV. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 500mW.
PackageTSOP
MountingSurface Mount
PolarityP-CHANNEL
Power500mW
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Technical Specifications
Infineon BSL215CL6327 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 1.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 9.7ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 143pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Nominal Vgs | 950mV |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 500mW |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 950mV |
| Turn-Off Delay Time | 14.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSL215CL6327 Datasheet
Download the complete datasheet for Infineon BSL215CL6327 to view detailed technical specifications.
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