
P-channel MOSFET with 5.5A continuous drain current and -30V drain-to-source voltage. Features 43mΩ on-state resistance and a maximum power dissipation of 2W. This single-element silicon FET is housed in a 6-pin TSOP package with tin, matte contact plating, suitable for surface mounting. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Infineon BSL307SPH6327XTSA1 technical specifications.
| Package/Case | TSOP |
| Contact Plating | Tin, Matte |
| Continuous Drain Current (ID) | 5.5A |
| Current Rating | -5.5A |
| Drain to Source Voltage (Vdss) | -30V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1mm |
| Input Capacitance | 805pF |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| On-State Resistance | 43mR |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Power Dissipation | 2W |
| Rds On Max | 43mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -1.5V |
| DC Rated Voltage | -30V |
| Width | 1.6mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSL307SPH6327XTSA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
