N-channel MOSFET transistor featuring OptiMOS™ technology in a TSOP package for surface mounting. Delivers a continuous drain current of 7.5A with a drain-to-source breakdown voltage of 20V. Offers a low on-resistance of 22mΩ (22 milliohms) and a maximum power dissipation of 2W. Operates within a temperature range of -55°C to 150°C, with a nominal gate-source voltage of 550mV and a threshold voltage of 550mV. Features a fast fall time of 5.5ns and a turn-off delay time of 20ns.
PackageTSOP
Resistance0.018R
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSL802SNL6327 technical specifications.
General
| Package/Case | TSOP |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 1.347nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 550mV |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 22mR |
| Reach SVHC Compliant | No |
| Resistance | 0.018R |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 550mV |
| Turn-Off Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSL802SNL6327 Datasheet
Download the complete datasheet for Infineon BSL802SNL6327 to view detailed technical specifications.
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