The BSM100GB120DLC is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 200A. It operates within a temperature range of -40°C to 125°C and is packaged in a flange mount R-XUFM-X7 configuration. The transistor is RoHS compliant and has a power dissipation of 780W.
PackageModule
MountingScrew
Power780W
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Technical Specifications
Infineon BSM100GB120DLC technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 200A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 500 |
| Power Dissipation | 780W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM100GB120DLC Datasheet
Download the complete datasheet for Infineon BSM100GB120DLC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.