The BSM100GB120DLCK is a high-power insulated gate bipolar transistor (IGBT) module from Infineon. It features a collector-emitter voltage of 1.2kV and a maximum collector current of 205A. The module is designed for high-power applications and has a maximum power dissipation of 835W. It is packaged in a module format and is screw mounted. The operating temperature range is from -40°C to 125°C. The BSM100GB120DLCK is RoHS compliant.
PackageModule
MountingScrew
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Technical Specifications
Infineon BSM100GB120DLCK technical specifications.
General
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 30.5mm |
| Length | 94mm |
| Max Collector Current | 205A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 835W |
| Mount | Screw |
| Package Quantity | 10 |
| Packaging | Tray |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 34mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM100GB120DLCK Datasheet
Download the complete datasheet for Infineon BSM100GB120DLCK to view detailed technical specifications.
No datasheet is available for this part.
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