The BSM100GB120DN2K is a high-power insulated gate bipolar transistor (IGBT) module from Infineon. It features a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 145A. The module is designed to dissipate up to 700W of power and operates within a temperature range of -40°C to 150°C. It is mounted using screws and is compliant with RoHS regulations.
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| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 145A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 500 |
| Power Dissipation | 700W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
