Infineon
BSM100GB120DN2K
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7
PackageModule
MountingScrew
Power700W
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Technical Specifications
Infineon BSM100GB120DN2K technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.5V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 145A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 500 |
| Power Dissipation | 700W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM100GB120DN2K Datasheet
Download the complete datasheet for Infineon BSM100GB120DN2K to view detailed technical specifications.
No datasheet is available for this part.