Infineon
BSM100GB170DN2
Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, HALF-BRIDGE 2, 7 PIN
PackageModule
MountingScrew
Power1kW
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Technical Specifications
Infineon BSM100GB170DN2 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.7kV
Collector Emitter Saturation Voltage
3.4V
Collector-emitter Voltage-Max
1.7kV
Max Collector Current
145A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Mount
Screw
Package Quantity
500
Power Dissipation
1kW
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Infineon BSM100GB170DN2 Datasheet
Download the complete datasheet for Infineon BSM100GB170DN2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.