Infineon
BSM100GD120DN2
INFINEON BSM100GD120DN2 IGBT Array & Module Transistor, N Channel, 150 A, 3 V, 680 W, 1.2 kV, EconoPACK
PackageModule
MountingScrew
Power680W
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Technical Specifications
Infineon BSM100GD120DN2 technical specifications.
General
Package/Case
Module
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.5V
Collector-emitter Voltage-Max
1.2kV
Height
17mm
Length
122mm
Max Collector Current
150A
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
680W
Mount
Screw
Package Quantity
10
Power Dissipation
680W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Width
62mm
Compliance
RoHS
Compliant
Datasheet
Infineon BSM100GD120DN2 Datasheet
Download the complete datasheet for Infineon BSM100GD120DN2 to view detailed technical specifications.
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