The BSM10GD120DN2E3224 is a 1200V insulated gate bipolar transistor (IGBT) module with a maximum collector current of 15A and a power dissipation of 80W. It is designed for screw mount applications and operates within a temperature range of -40°C to 150°C. The module is packaged in a tape and reel format with 10 units per package. It is compliant with RoHS regulations.
PackageModule
MountingScrew
Power80W
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Technical Specifications
Infineon BSM10GD120DN2E3224 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 2.7V |
| Collector-emitter Voltage-Max | 1.2kV |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Power Dissipation | 80W |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM10GD120DN2E3224 Datasheet
Download the complete datasheet for Infineon BSM10GD120DN2E3224 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.