The BSM25GD120DLCE3224 is an insulated gate bipolar transistor (IGBT) module from Infineon, featuring a collector-emitter voltage maximum of 1.2kV and a collector-emitter saturation voltage of 2.1V. It has a maximum collector current of 50A and a maximum power dissipation of 200W. The module is designed for screw mounting and has a package quantity of 10. It is compliant with RoHS regulations and has an operating temperature range of -40°C to 125°C.
PackageModule
MountingScrew
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Technical Specifications
Infineon BSM25GD120DLCE3224 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector-emitter Voltage-Max | 1.2kV |
| Height | 17mm |
| Length | 107.5mm |
| Max Collector Current | 50A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 200W |
| Mount | Screw |
| Package Quantity | 10 |
| RoHS Compliant | Yes |
| Width | 45mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSM25GD120DLCE3224 Datasheet
Download the complete datasheet for Infineon BSM25GD120DLCE3224 to view detailed technical specifications.
No datasheet is available for this part.