N-Channel MOSFET, surface mount, featuring 30V drain-source breakdown voltage and 14A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 5.2mΩ drain-source resistance (Rds On Max) and a maximum power dissipation of 1.56W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching characteristics with a 7.4ns fall time and 9.7ns turn-on delay. Packaged in an 8-pin SOIC on tape and reel, this RoHS compliant component is designed for efficient power management applications.
PackageSOIC
Current Rating18A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSO052N03S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 7.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.53nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.56W |
| Rds On Max | 5.2mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.2V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9.7ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO052N03S Datasheet
Download the complete datasheet for Infineon BSO052N03S to view detailed technical specifications.
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