
N-channel MOSFET for surface mount applications, featuring a 30V drain-source breakdown voltage and a continuous drain current of 12A. This component offers a low on-resistance of 6.4mΩ at a 10V gate-source voltage, with a maximum power dissipation of 1.56W. It operates within a temperature range of -55°C to 150°C and is supplied in tape and reel packaging. Key switching characteristics include a fall time of 5.8ns and a turn-off delay time of 29ns.
Infineon BSO064N03S technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.62nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.56W |
| Rds On Max | 6.4mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 6.7ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSO064N03S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
