Infineon
BSO080P03NS3G
Power Field-Effect Transistor, 12A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, DSO-8
PackageTO-263-3
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Technical Specifications
Infineon BSO080P03NS3G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 25V |
| Halogen Free | Halogen Free |
| Input Capacitance | 6.75nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 64ns |
| Turn-On Delay Time | 16ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO080P03NS3G Datasheet
Download the complete datasheet for Infineon BSO080P03NS3G to view detailed technical specifications.
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