N-channel Power MOSFET, 30V Drain-Source Voltage, 8.6A Continuous Drain Current. Features OptiMOS process technology, single quad drain triple source configuration, and a maximum drain-source on-resistance of 10.8 mOhm at 10V. Housed in an 8-pin DSO (Dual Small Outline) lead-frame SMT package with gull-wing leads, measuring 5mm x 4mm x 1.65mm. Operates from -55°C to 150°C, with a maximum power dissipation of 2500mW.
PackageDSO
MountingSurface Mount
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Technical Specifications
Infineon BSO108N03MSC G technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | DSO |
| Package Description | Dual Small Outline |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4(Max) |
| Package Height (mm) | 1.65(Max) |
| Seated Plane Height (mm) | 1.75(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | OptiMOS |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 8.6A |
| Maximum Drain Source Resistance | 10.8@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|15@10VnC |
| Typical Gate Charge @ 10V | 15nC |
| Typical Input Capacitance @ Vds | 1100@15VpF |
| Maximum Power Dissipation | 2500mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BSO108N03MSC G Datasheet
Download the complete datasheet for Infineon BSO108N03MSC G to view detailed technical specifications.
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