N-Channel MOSFET, surface mount, featuring 30V drain-source breakdown voltage and 9A continuous drain current. Offers low on-state resistance of 11.9mR at 10Vgs. Operates with a nominal gate-source threshold voltage of 1.6V and a maximum gate-source voltage of 20V. Includes a fall time of 3.8ns and turn-off delay of 18ns, with 1.73nF input capacitance. Rated for 1.56W power dissipation and available in tape and reel packaging.
PackageSOIC
Current Rating9A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSO119N03S technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
9A
Current Rating
9A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
11.9mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
3.8ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.73nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.56W
Mount
Surface Mount
Nominal Vgs
1.6V
On-State Resistance
16.3mR
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.56W
Rds On Max
11.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Termination
SMD/SMT
Threshold Voltage
1.6V
Turn-Off Delay Time
18ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Infineon BSO119N03S Datasheet
Download the complete datasheet for Infineon BSO119N03S to view detailed technical specifications.
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