N-Channel MOSFET, surface mount, featuring 30V drain-source breakdown voltage and 9A continuous drain current. Offers low on-state resistance of 11.9mR at 10Vgs. Operates with a nominal gate-source threshold voltage of 1.6V and a maximum gate-source voltage of 20V. Includes a fall time of 3.8ns and turn-off delay of 18ns, with 1.73nF input capacitance. Rated for 1.56W power dissipation and available in tape and reel packaging.
PackageSOIC
Current Rating9A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSO119N03S technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 3.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.73nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.56W |
| Mount | Surface Mount |
| Nominal Vgs | 1.6V |
| On-State Resistance | 16.3mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.56W |
| Rds On Max | 11.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Termination | SMD/SMT |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 18ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO119N03S Datasheet
Download the complete datasheet for Infineon BSO119N03S to view detailed technical specifications.
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