N-channel silicon MOSFET, 2-element, surface mount device in an 8-pin SOIC package. Features 30V drain-to-source voltage (Vdss) and 8A continuous drain current (ID). Offers low on-resistance (Rds On Max) of 15mΩ and a maximum power dissipation of 1.4W. Operates across a wide temperature range from -55°C to 150°C. Halogen and lead-free, RoHS compliant with tin contact plating.
PackageSOIC
MountingSurface Mount
Power1.4W
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Technical Specifications
Infineon BSO150N03MDGXUMA1 technical specifications.
General
| Package/Case | SOIC |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.3nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 1.4W |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO150N03MDGXUMA1 Datasheet
Download the complete datasheet for Infineon BSO150N03MDGXUMA1 to view detailed technical specifications.
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