
N-Channel MOSFET, 30V Vds, 7A continuous drain current, and 20mΩ Rds(on). This surface-mount device features a 2.6ns fall time and 2.9ns turn-on delay, with a 12ns turn-off delay. Operating across a temperature range of -55°C to 150°C, it offers 1.4W max power dissipation. Packaged in a green, lead-free SOP-8 plastic package.
Infineon BSO200N03 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 7A |
| Current Rating | 6.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.6ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.01nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.56W |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 2.9ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Infineon BSO200N03 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
