BSO200N03S

N-channel MOSFET, designed for surface mount applications, features a 30V drain-to-source breakdown voltage and a continuous drain current of 7A. This silicon Metal-oxide Semiconductor FET offers a low on-state resistance of 20mΩ at a nominal gate-source voltage of 1.6V. Operating within a temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 1.56W and a fast fall time of 2.6ns. The component is packaged in an 8-pin SOIC package, supplied on tape and reel, and is RoHS compliant.