P-channel MOSFET, 20V drain-source voltage, 8mΩ Rds On, and 14.9A continuous drain current. Features a 1.6W power dissipation and -55°C to 150°C operating temperature range. Surface mountable in a green plastic DSO-8 package with tin contact plating. This silicon Metal-oxide Semiconductor FET offers 9.6nF input capacitance and a -900mV threshold voltage.
PackageSO
MountingSurface Mount
Power1.6W
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Technical Specifications
Infineon BSO201SPHXUMA1 technical specifications.
General
| Package/Case | SO |
| Contact Plating | Tin |
| Continuous Drain Current (ID) | 14.9A |
| Drain to Source Voltage (Vdss) | -20V |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Input Capacitance | 9.6nF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | -20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Power Dissipation | 1.6W |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | -900mV |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO201SPHXUMA1 Datasheet
Download the complete datasheet for Infineon BSO201SPHXUMA1 to view detailed technical specifications.
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