The BSO211PNTMA1 is a surface mount MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.7A and a drain to source voltage of 20V. The device is packaged in a SOIC case and is available in tape and reel packaging. The MOSFET has a maximum power dissipation of 2W and is not radiation hardened.
Infineon BSO211PNTMA1 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 23.3ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 920pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 67mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 26.3ns |
| Turn-On Delay Time | 7.8ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Infineon BSO211PNTMA1 to view detailed technical specifications.
No datasheet is available for this part.