Infineon
BSO220N03MDG
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-8
PackageSOIC
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Technical Specifications
Infineon BSO220N03MDG technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 1.65mm |
| Input Capacitance | 800pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 22mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 6.4ns |
| Turn-On Delay Time | 5.7ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO220N03MDG Datasheet
Download the complete datasheet for Infineon BSO220N03MDG to view detailed technical specifications.
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