P-channel MOSFET for power applications, featuring a 30V drain-source breakdown voltage and 8.2A continuous drain current. This surface-mount device offers a low on-resistance of 21mΩ at a gate-source voltage of 20V. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, it is packaged in an SOIC case. Key switching characteristics include a turn-on delay time of 10.6ns and a fall time of 39.3ns.
PackageSOIC
Current Rating-8.2A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Infineon BSO303P technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 8.2A |
| Current Rating | -8.2A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 39.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.761nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 21mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 55.4ns |
| Turn-On Delay Time | 10.6ns |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon BSO303P Datasheet
Download the complete datasheet for Infineon BSO303P to view detailed technical specifications.
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