BSO315C

Power Field-Effect Transistor, 3.4A I(D), 30V, 0.11ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

PackageSOIC

Current Rating3.1A

MountingSurface Mount

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Infineon BSO315C technical specifications.

Package/Case

SOIC

Continuous Drain Current (ID)

2.6A

Current Rating

3.1A

Drain to Source Voltage (Vdss)

60V

FET Type

2 N-Channel

Input Capacitance

380pF

Max Power Dissipation

Mount

Surface Mount

Packaging

Cut Tape

Rds On Max

150mR

RoHS Compliant

Series

SIPMOS®

RoHS

Not Compliant

This datasheet cannot be embedded due to technical restrictions.