N-channel MOSFET, designed for surface mount applications, features a 30V drain-source breakdown voltage and a continuous drain current of 5A. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 35mΩ at a 10V gate-source voltage. Operating within a temperature range of -55°C to 150°C, it boasts a maximum power dissipation of 1.4W and a fast fall time of 2.2ns. The component is supplied in an 8-pin SOIC package, is lead-free, and RoHS compliant.
PackageSOIC
Current Rating6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSO350N03 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 2.2ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 480pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.4W |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 8.7ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSO350N03 Datasheet
Download the complete datasheet for Infineon BSO350N03 to view detailed technical specifications.
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