The BSO615NV is a 2 N-Channel MOSFET from Infineon with a maximum drain to source voltage of 30V and a continuous drain current of 6.6A. It features a maximum power dissipation of 1.4W and an input capacitance of 1.01nF. The device is packaged in a SOIC case and is mounted on the surface. It is part of the OptiMOS series and is not RoHS compliant.
PackageSOIC
Current Rating3.1A
MountingSurface Mount
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Technical Specifications
Infineon BSO615NV technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | 3.1A |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Input Capacitance | 1.01nF |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 20mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Not Compliant |
Datasheet
Infineon BSO615NV Datasheet
Download the complete datasheet for Infineon BSO615NV to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.