
N-channel enhancement mode MOSFET for surface mount applications. Features 200V drain-source voltage and 0.66A continuous drain current. Housed in a 4-pin SOT-223 (TO-261AA) plastic package with gull-wing leads, offering a package height of 1.6mm. SIPMOS process technology ensures efficient switching with a typical gate charge of 12.9nC and low input capacitance. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 1800mW.
Infineon BSP 297 technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.6 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Configuration | Single Dual Drain |
| Category | Small Signal |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 0.66A |
| Maximum Gate Threshold Voltage | 1.8V |
| Maximum Drain Source Resistance | 1800@10VmOhm |
| Typical Gate Charge @ Vgs | 12.9@10VnC |
| Typical Gate Charge @ 10V | 12.9nC |
| Typical Input Capacitance @ Vds | 286@25VpF |
| Maximum Power Dissipation | 1800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 38pF |
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | Yes |
| AEC Qualified | Yes |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Infineon BSP 297 to view detailed technical specifications.
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