N-channel enhancement mode MOSFET for surface mount applications. Features 200V drain-source voltage and 0.66A continuous drain current. Housed in a 4-pin SOT-223 (TO-261AA) plastic package with gull-wing leads, offering a package height of 1.6mm. SIPMOS process technology ensures efficient switching with a typical gate charge of 12.9nC and low input capacitance. Operating temperature range from -55°C to 150°C with a maximum power dissipation of 1800mW.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Infineon BSP 297 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package/Case
SOT-223
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
3.5
Package Height (mm)
1.6
Seated Plane Height (mm)
1.8(Max)
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-261AA
Configuration
Single Dual Drain
Category
Small Signal
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SIPMOS
Maximum Drain Source Voltage
200V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
0.66A
Maximum Gate Threshold Voltage
1.8V
Maximum Drain Source Resistance
1800@10VmOhm
Typical Gate Charge @ Vgs
12.9@10VnC
Typical Gate Charge @ 10V
12.9nC
Typical Input Capacitance @ Vds
286@25VpF
Maximum Power Dissipation
1800mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
38pF
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon BSP 297 Datasheet
Download the complete datasheet for Infineon BSP 297 to view detailed technical specifications.
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