P-channel Power MOSFET in a SOT-223 (TO-261AA) surface-mount package. Features a 50V drain-source voltage, 1.1A continuous drain current, and 800mOhm drain-source resistance. SIPMOS process technology enables enhancement mode operation. Package dimensions are 6.5mm length, 3.5mm width, and 1.6mm height with a 2.3mm pin pitch. Operating temperature range is -55°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Infineon BSP 315 technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-223 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 4 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.5 |
| Package Width (mm) | 3.5 |
| Package Height (mm) | 1.6 |
| Seated Plane Height (mm) | 1.8(Max) |
| Pin Pitch (mm) | 2.3 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-261AA |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | SIPMOS |
| Maximum Drain Source Voltage | 50V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 1.1@Ta=39CA |
| Maximum Drain Source Resistance | 800@10VmOhm |
| Typical Input Capacitance @ Vds | 300@25VpF |
| Maximum Power Dissipation | 1800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Infineon BSP 315 Datasheet
Download the complete datasheet for Infineon BSP 315 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.