N-channel MOSFET in SOT-223-4 package for surface mounting. Features 600V drain-to-source breakdown voltage and 120mA continuous drain current. Offers 45 Ohm Rds On Max and 1.8W maximum power dissipation. Operates from -55°C to 150°C with a nominal gate-source threshold voltage of 1.9V. Includes 14.4ns fall time and 20ns turn-off delay time.
PackageSOT-223-4
Current Rating120mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Infineon BSP125-L6327 technical specifications.
General
Package/Case
SOT-223-4
Continuous Drain Current (ID)
120mA
Current Rating
120mA
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
45R
Drain to Source Voltage (Vdss)
600V
Fall Time
14.4ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
150pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.8W
Mount
Surface Mount
Nominal Vgs
1.9V
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.8W
Rds On Max
45R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SIPMOS®
Threshold Voltage
1.9V
Turn-Off Delay Time
20ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Infineon BSP125-L6327 Datasheet
Download the complete datasheet for Infineon BSP125-L6327 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
