N-channel MOSFET in SOT-223-4 package for surface mounting. Features 600V drain-to-source breakdown voltage and 120mA continuous drain current. Offers 45 Ohm Rds On Max and 1.8W maximum power dissipation. Operates from -55°C to 150°C with a nominal gate-source threshold voltage of 1.9V. Includes 14.4ns fall time and 20ns turn-off delay time.
PackageSOT-223-4
Current Rating120mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon BSP125-L6327 technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 120mA |
| Current Rating | 120mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 45R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 14.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.8W |
| Rds On Max | 45R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Threshold Voltage | 1.9V |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Infineon BSP125-L6327 Datasheet
Download the complete datasheet for Infineon BSP125-L6327 to view detailed technical specifications.
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