INFINEON

BSP125H6327XTSA1

Datasheet

600V N-Channel MOSFET, 120mA ID, 45Ω RDS(on), SOT-223

Infineon

BSP125H6327XTSA1

Name: BSP125H6327XTSA1 Infineon
Brand: Infineon
SKU: BSP125H6327XTSA1

600V N-Channel MOSFET, 120mA ID, 45Ω RDS(on), SOT-223

N-Channel Power MOSFET, 600V Drain-Source Breakdown Voltage, 120mA Continuous Drain Current, and 45 Ohm On-State Resistance. This silicon Metal-oxide Semiconductor FET features a 1.8W power dissipation and a 1-element configuration. Designed for surface mounting in a SOT-223 plastic package, it offers fast switching with a 7.7ns turn-on delay and 20ns turn-off delay. Operating across a wide temperature range of -55°C to 150°C, this component is RoHS compliant and halogen-free.

PackageSOT-223

MountingSurface Mount

PolarityN-CHANNEL

Power1.8W

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Technical Specifications

Infineon BSP125H6327XTSA1 technical specifications.

General

Package/Case	SOT-223
Continuous Drain Current (ID)	120mA
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	25R
Drain to Source Voltage (Vdss)	600V
Fall Time	110ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Height	1.6mm
Input Capacitance	100pF
Lead Free	Lead Free
Length	6.5mm
Max Dual Supply Voltage	600V
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1.8W
Mount	Surface Mount
Number of Elements	1
On-State Resistance	45R
Package Quantity	1000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	1.8W
RoHS Compliant	Yes
Series	BSP125
Turn-Off Delay Time	20ns
Turn-On Delay Time	7.7ns
Width	3.5mm